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參數(shù)資料
| 型號(hào)： | MS835 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 8 Amp Schottky Rectifier |
| 中文描述： | 8 A, 35 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | MS835 |
MS820
THRU
MS8100
8 Amp Schottky
Barrier Rectifier
20 to 100 Volts
DO-201AD
Features
Low Switching Noise
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
DIMENSIONS
INCHES
MIN
---
---
.048
1.000
MM
DIM
A
B
C
D
MAX
.370
.250
.052
---
MIN
---
---
1.20
25.40
MAX
9.50
6.40
1.30
---
NOTE
Maximum Ratings
Operating Temperature: -55
°
C to +125
°
C
Storage Temperature: -55
°
C to +150
°
C
Maximum Thermal Resistance; 30
°
C/W Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
20V
30V
35V 24.5V 35V
40V
45V 31.5V 45V
60V
80V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
MS820
MS830
MS835
MS840
MS845
MS860
MS880 MS880
MS820
MS830
MS835
MS840
MS845
MS860
14V
21V
20V
30V
28V
40V
42V
56V
60V
80V
MS8100 MS8100 100V
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
MS820-MS860
MS880-MS8100
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
*Pulse test: Pulse width 300
μ
sec, Duty cycle 1%
70V
100V
I
F(AV)
8.0A
T
A
= 120
°
C
I
FSM
200A
8.3ms, half sine
V
F
.62V
.85V
I
FM
= 8.0A;
T
A
= 25
°
C*
I
R
50mA T
A
= 100
o
C
1.0mA
T
A
= 25
°
C
C
J
550pF
Measured at
1.0MHz, V
R
=4.0V
A
B
C
D
D
Cathode
Mark
www.
mc c semi
.c om
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
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