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參數(shù)資料
| 型號： | MS2602 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.400 X 0.400 INCH, HERMETIC SEALED, M218, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 111K |
| 代理商： | MS2602 |
12-05-2002
MS2602
ABSOLU
ABSOLUTE MAXIMUM RATINGS
TE MAXIMUM RATINGS
TE MAXIMUM RATINGS (Tcase = 25°°°°C)
Symbol
Parameter
Value
Unit
VCC
Collector – Supply Voltage
34
V
PDISS
Power Dissipation
23
W
IC
Device Current*
0.9
A
TJ
Junction Temperature
200
C
TSTG
Storage Temperature
-65 to +200
C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
6.5
°°°°C/W
Features
2.7 – 3.1 GHz
30 VOLTS
POUT = 3.0 WATTS
GP = 5.7 dB MINIMUM
GOLD METALIZATION
INPUT/OUTPUT MATCHING
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2602 is a silicon NPN bipolar transistor designed
for pulsed S-Band radar applications.
The MS2602 is capable of operation over a wide range of
pulse widths and duty cycles. Internal impedance
matching and gold metalization provide consistent
broadband performance and long term reliability.
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATION
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| MS26036-149 | 制造商:HOLLINGSWORTH 功能描述:22-18awg No. 8 stud ring terminal - FAC STK |
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