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參數(shù)資料
| 型號： | MS1022-CT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | PNP RF Amplifier Transistor Surface Mount |
| 中文描述： | 進(jìn)步黨射頻放大器晶體管表面貼裝 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 28K |
| 代理商： | MS1022-CT1 |
LESHAN RADIO COMPANY, LTD.
N1–1/1
PNP RF Amplifier Transistor
Surface Mount
3
CASE 318D–03, STYLE1
SC–59
1
2
ECX
MAXIMUM RATINGS
(T
A
= 25 °C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C)
Characteristic
Collector Cutoff Current
(V
CB
= –10 Vdc, I
E
= 0)
Collector-Emitter Breakdown Voltage
(V
CE
= –20 Vdc, I
B
= 0)
Emitter-Base Breakdown Voltage
(V
EB
= –5.0 Vdc, I
C
= 0)
DC Current Gain (1)
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc)
Current-Gain - Bandwidth Product
(V
CB
= –10 Vdc, I
E
= 1.0 mAdc)
1. Pulse Test: Pulse Width
<
300
μ
s, D.C.
<
2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
–30
–20
–5.0
–30
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
P
D
T
J
T
stg
Max
200
150
Unit
mW
°C
°C
-55 ~ +150
Symbo
lMin
Max
Unit
I
CBO
—
–0.1
μ
Adc
I
CEO
—
–100
μ
Adc
I
EBO
—
–10
μ
Adc
h
FE
110
220
—
f
T
150
—
MHz
COLLECTOR
3
2 1
BASE EMITTER
MSA1022–CT1
DEVICE MARKING
Marking Symbol
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
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