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參數(shù)資料
| 型號： | MRFIC0917 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 168K |
| 代理商： | MRFIC0917 |
MRFIC0917
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
P
Figure 3. Output Power versus Frequency
33.5
f, FREQUENCY (MHz)
31
890
31.5
32.5
32
Figure 4. Power Added Efficiency
versus Frequency
43
f, FREQUENCY (MHz)
52
44
885
895
48
P
880
P
33
Figure 5. Output Power versus Frequency
35.5
f, FREQUENCY (MHz)
Figure 6. Power Added Efficiency
versus Frequency
50
f, FREQUENCY (MHz)
42
Figure 7. Output Power versus Frequency
f, FREQUENCY (MHz)
34
33.6
34.8
Figure 8. Output Power versus Drain Voltage
VD1, VD2, DRAIN VOLTAGE (V)
5
2
25
3
5
0
10
15
46
44
40
34.4
36.4
34
40
54
32.5
33
33.5
34
45
47
46
900
50
35.6
30
20
1
915
905
Pin = 12 dBm
VD1 = VD2 = 3.0 V
VSS = –4.0 V
P
35
34.5
Pin = 12 dBm
VSS = –4.0 V
f = 900 MHz
3.5
4
4.5
TA = –40
°
C
910
51
49
25
°
C
TA = –40
°
C
85
°
C
Pin = 12 dBm
VD1 = VD2 = 3.6 V
VSS = –4.0 V
Pin = 12 dBm
VD1 = VD2 = 3.6 V
VSS = –4.0 V
25
°
C
TA = –40
°
C
85
°
C
P
48
52
3.6 V
VD1 = VD2 = 4.2 V
3.0 V
Pin = 12 dBm
VSS = –4.0 V
TA = 25
°
C
P
36
35.2
Pin = 12 dBm
VD1 = VD2 = 4.2 V
VSS = –4.0 V
25
°
C
TA = –40
°
C
85
°
C
2.5
0.5
1.5
35
25
°
C
TA = 85
°
C
–40
°
C
85
°
C
25
°
C
890
885
895
880
900
915
905
910
890
885
895
880
900
915
905
910
890
885
895
880
900
915
905
910
890
885
895
880
900
915
905
910
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| MRFIC1501R2 | 制造商:Freescale Semiconductor 功能描述: |
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