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參數(shù)資料
| 型號(hào)： | MRFE6S9046NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-270, CASE 1486-03, WB, 4 PIN |
| 文件頁數(shù)： | 18/21頁 |
| 文件大?。?/td> | 630K |
| 代理商： | MRFE6S9046NR1 |
6
RF Device Data
Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1
TYPICAL CHARACTERISTICS
η
D
,DRAIN
EFFICIENCY
(%)
10
70
10
20
30
50
0.1
100
40
IRL,
INPUT
RETURN
LOSS
(dB)
920
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 35.5 Watts CW
28
16
19
22
25
18.6
19.6
48
58
57
56
55
53
52
51
50
G
ps
,POWER
GAIN
(dB)
925
930
935
940
945
950
955
960
54
49
31
η
D
,DRAIN
EFFICIENCY
(%)
VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA
IRL,
INPUT
RETURN
LOSS
(dB)
920
IRL
Gps
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout = 17.8 Watts Avg.
35
15
20
25
30
18.5
19.5
1
42
41
40
39
6
5
4
3
G
ps
,POWER
GAIN
(dB)
925
930
935
940
945
950
955
960
38
2
40
VDD = 28 Vdc, Pout = 17.8 W (Avg.)
IDQ = 285 mA, EDGE Modulation
Pout, OUTPUT POWER (WATTS) CW
15
21
1
IDQ = 450 mA
VDD = 28 Vdc
f = 940 MHz
20
18
17
10
100
Figure 6. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
19
375 mA
TWOTONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Two-Tone Spacing
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
EVM
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
IM3U
IM3L
IM5U
IM5L
IM7L
IM7U
VDD = 28 Vdc, Pout = 44 W (PEP), IDQ = 300 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
ηD
18.7
19.5
19.4
19.3
19
18.9
18.8
19.2
19.1
19.4
19.3
19.2
19.1
19
18.9
18.8
18.7
18.6
16
300 mA
225 mA
150 mA
60
1
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| MRFE6S9060GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRFE6S9060NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9125NBR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9125NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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