- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98042 > MRF949T1 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MRF949T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-75, SC-90, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 298K |
| 代理商： | MRF949T1 |
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MRF949T1
2
MOTOROLA RF/IF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS [Note 1]
Collector–Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0)
V(BR)CEO
10
12
–
Vdc
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
20
23
–
Vdc
Emitter Cutoff Current (VEB = 1.0 V, IC = 0)
IEBO
–
0.1
A
Collector Cutoff Current (VCB = 10 V, IE = 0)
ICBO
–
0.1
A
ON CHARACTERISTICS [Note 1]
DC Current Gain (VCE = 6.0 V, IC = 5.0 mA)
hFE
50
–
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
Ccb
pF
(VCB = 1.0 V, IE = 0, f = 1.0 MHz)
–
0.4
–
(VCB = 5.0 V, IE = 0, f = 1.0 MHz)
–
0.3
–
Current–Gain Bandwidth Product (VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
f
τ
–
9.0
–
GHz
PERFORMANCE CHARACTERISTICS
Insertion Gain
|S21|2
dB
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
–
7.0
–
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
–
15
–
Maximum Unilateral Gain [Note 2]
GUmax
dB
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
–
13
–
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
–
17
–
Maximum Stable Gain and/or Maximum Available Gain [Note 3]
dB
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
MSG
–
12
–
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
MAG
–
18
–
Noise Figure – Minimum
NFmin
dB
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
–
1.6
–
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
–
1.4
–
Noise Resistance
RN
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
–
24
–
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
–
19
–
Associated Gain at Minimum NF
GNF
dB
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
–
10
–
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
–
15
–
Output Power at 1.0 dB Gain Compression [Note 4] (VCE = 6.0 V,
P1dB
–
13
–
dBm
IC = 15 mA, f = 1.0 GHz)
Output Third Order Intercept [Note 4] (VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
OIP3
–
28
–
dBm
NOTES: 1. Pulse width
≤300 s, duty cycle ≤2% pulsed.
2. Maximum unilateral gain is:
G
Umax +
|S21|2
(1 – |S11|2)(1–|S22|
2)
3. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
MAG
+
|
S
21
S
12
K
" K2 * 1
|,if K u 1, MSG + |
S
21
S
12
|,if K t 1
4. Zin = 50 and Zout matched for optimum IP3.
LIFETIME
BUY
LAST
ORDER
25S
EP01
LAST
SHIP
26
MAR02
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF9511ALT1 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF951 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRFE6P3300HR3 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6P3300HR5 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6P9220HR3 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF951 | 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF9511LT1 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-143 |
| MRF951V2 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF951V3 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF951V4 | 功能描述:射頻雙極小信號晶體管 RF Bipolar Trans RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。