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參數資料
| 型號： | MRF949T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Low Noise Transistor(低噪聲晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-75, SC-90, 3 PIN |
| 文件頁數： | 2/12頁 |
| 文件大?。?/td> | 214K |
| 代理商： | MRF949T1 |
MRF949T1
2
MOTOROLA RF/IF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
[Note 1]
Collector–Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
Emitter Cutoff Current (VEB = 1.0 V, IC = 0)
Collector Cutoff Current (VCB = 10 V, IE = 0)
V(BR)CEO
V(BR)CBO
IEBO
ICBO
10
12
–
Vdc
20
23
–
Vdc
–
–
0.1
μ
A
–
–
0.1
μ
A
ON CHARACTERISTICS
[Note 1]
DC Current Gain (VCE = 6.0 V, IC = 5.0 mA)
hFE
50
–
–
–
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 1.0 V, IE = 0, f = 1.0 MHz)
(VCB = 5.0 V, IE = 0, f = 1.0 MHz)
Current–Gain Bandwidth Product (VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
Ccb
pF
–
–
0.4
0.3
–
–
f
τ
–
9.0
–
GHz
PERFORMANCE CHARACTERISTICS
Insertion Gain
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
Maximum Unilateral Gain [Note 2]
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
Maximum Stable Gain and/or Maximum Available Gain [Note 3]
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
Noise Figure – Minimum
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
Noise Resistance
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
Associated Gain at Minimum NF
(VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
Output Power at 1.0 dB Gain Compression [Note 4] (VCE = 6.0 V,
IC = 15 mA, f = 1.0 GHz)
Output Third Order Intercept [Note 4] (VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
|S21|2
dB
–
–
7.0
15
–
–
GUmax
dB
–
–
13
17
–
–
dB
MSG
MAG
–
–
12
18
–
–
NFmin
dB
–
–
1.6
1.4
–
–
RN
–
–
24
19
–
–
GNF
dB
–
–
10
15
–
–
P1dB
–
13
–
dBm
OIP3
–
28
–
dBm
NOTES:
1.Pulse width
≤
300
μ
s, duty cycle
≤
2% pulsed.
2.Maximum unilateral gain is:
GUmax
|S21|2
(1–|S11|2)(1–|S22|2)
3.Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
|
S12
4.Zin = 50
and Zout matched for optimum IP3.
MAG
S21
K
K2
1
|
, if K
1, MSG
|
S21
S12
|
, if K
1
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相關代理商/技術參數 |
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| MRF951 | 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF9511LT1 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-143 |
| MRF951V2 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF951V3 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF951V4 | 功能描述:射頻雙極小信號晶體管 RF Bipolar Trans RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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