參數資料
型號: MRF947T1
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: NPN Silicon Low Noise, High-Frequency Transistors
中文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: CASE 419-02, 3 PIN
文件頁數: 1/17頁
文件大?。?/td> 309K
代理商: MRF947T1
2–1
MMBR941 MRF947 MRF9411 SERIES
Motorola, Inc. 1997
The RF Line
$ ! #%
!!" !
Designed for use in high gain, low noise small–signal amplifiers. This series
features excellent broadband linearity and is offered in a variety of packages.
Fully Implanted Base and Emitter Structure
9 Finger, 1.25 Micron Geometry with Gold Top Metal
Gold Sintered Back Metal
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
Order this document
by MMBR941LT1/D
SEMICONDUCTOR TECHNICAL DATA
IC = 50 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR941LT1, T3, MMBR941BLT1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF9411LT1
CASE 419–02, STYLE 3
MRF947AT1, MRF947BT1,
MRF947T1, T3
REV 9
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相關代理商/技術參數
參數描述
MRF947T3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise, High-Frequency Transistors
MRF949BT1 制造商:Motorola Inc 功能描述:
MRF949T1 制造商:Motorola Inc 功能描述:
MRF951 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
MRF9511LT1 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-143