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參數(shù)資料
| 型號： | MRF927T3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 36K SERIAL CONFIGURATION PROM |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 165K |
| 代理商： | MRF927T3 |
1
MRF927T1 MRF927T3
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Small Signal Line
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#% !!" !
Designed for use in low voltage, low current applications at frequencies to
2.0 GHz. Specifically aimed at portable communication devices such as
pagers and hand–held phones.
High Gain (GUmax 15 dB Typ @ 1.0 GHz) @ 1.0 mA
Small, Surface–Mount Package (SC–70)
High Current Gain–Bandwidth Product at Low Current,
Low Voltage (f
τ
= 8.0 GHz Typ @ 3.0 V, 5.0 mA)
Available in Tape and Reel by Adding T1 or T3 Suffix to Part Number.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
T3 Suffix = 10,000 Units per 8 mm, 7 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
10
Vdc
Collector–Base Voltage
20
Vdc
Emitter–Base Voltage
2.5
Vdc
Collector Current — Continuous
10
mAdc
Total Device Dissipation @ TC = 50
°
C
Derate above 50
°
C
100
1.0
mW
mW/
°
C
Storage Temperature Range
Tstg
TJ
– 55 to +150
°
C
Operating Temperature Range
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction–to–Case
R
θ
JC
1000
°
C/W
DEVICE MARKING
MRF927T1 = F
Order this document
by MRF927T1/D
SEMICONDUCTOR TECHNICAL DATA
IC = 10 mA
LOW NOISE
HIGH FREQUENCY
TRANSISTOR
CASE 419–02, STYLE 3
(SC–70/SOT–323)
REV 1
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