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參數(shù)資料
| 型號(hào)： | MRF9130LSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 439K |
| 代理商： | MRF9130LSR3 |
2
RF Device Data
Freescale Semiconductor
MRF9130LR3 MRF9130LSR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vds, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vds, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 450 μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
VGS(Q)
—
3.6
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.2
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 9 Adc)
gfs
—
12
—
S
Dynamic Characteristics (1)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
110
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
4.4
—
pF
Functional Tests (In Freescale Test Fixture)
Power Output, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 1000 mA, f = 921 and 960 MHz)
P1dB
120
135
—
W
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz)
Gps
15.5
16.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz)
η
43
48
—
%
Input Return Loss
(VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz)
IRL
—
-12
-9
dB
1. Part internally input matched.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9135L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF9135LR3 | 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI-780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9135LR5 | 功能描述:射頻MOSFET電源晶體管 135W 900MHZ LDMOS NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9135LSR3 | 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9135LSR5 | 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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