參數(shù)資料
型號: MRF9130LR3
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: SEE A3938SLD-T
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-780, CASE 465-06, 2 PIN
文件頁數(shù): 6/12頁
文件大小: 557K
代理商: MRF9130LR3
MRF9130LR3 MRF9130LSR3
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 8. EVM and Efficiency versus Output
Power
Figure 9. Spectral Regrowth versus Output
Power
P
out
, OUTPUT POWER (WATTS) AVG.
S
100
75
60
V
DD
= 28 Vdc
I
DQ
= 800 mA
f = 960 MHz
65
70
85
10
1
80
@ 400 kHz
@ 600 kHz
50
55
NOTE: Curves on Figure 8 and 9 gathered on a GSM EDGE optimized text fixture.
P
out
, OUTPUT POWER (WATTS) AVG.
E
100
4
10
V
DD
= 28 Vdc
I
DQ
= 800 mA
f = 960 MHz
8
6
0
10
1
2
EVM
20
50
40
30
0
10
,
η
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關PDF資料
PDF描述
MRF9130LSR3 RF Power Field Effect Transistors
MRF9180 30V N-Channel PowerTrench MOSFET
MRF9180S 30V N-Channel PowerTrench MOSFET
MRF9210 THREE PHASE MOSFET CONTROLLER
MRF9210R3 RF Power Field Effect Transistor
相關代理商/技術參數(shù)
參數(shù)描述
MRF9130LSR3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF9135L 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF9135LR3 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI-780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9135LR5 功能描述:射頻MOSFET電源晶體管 135W 900MHZ LDMOS NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9135LSR3 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray