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參數(shù)資料
| 型號： | MRF9085R3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 151K |
| 代理商： | MRF9085R3 |
5
MRF9085 MRF9085R3 MRF9085S MRF9085SR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
–80
–40
–60
–20
20
0
40
IMD
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
G
860
18
Figure 3. Class AB Broadband Circuit Performance
14
11
Pout, OUTPUT POWER (WATTS) PEP
19
7
Figure 4. Power Gain, Efficiency, IMD versus
Output Power
1
9
1
–70
Figure 5. Intermodulation Distortion Products
versus Output Power
100
10
–10
–30
–60
–50
–40
11
13
15
13
12
VDD = 26 Vdc
IDQ = 700 mA
Pout = 90 Watts (PEP)
Two–Tone, 100 kHz Tone Spacing
865
17
15
17
10
100
16
870
875
880
885
890
895
900
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) CW AVG.
G
18
12
Figure 6. Power Gain, Efficiency versus Output
Power
1
13
10
7
Figure 7. Power Gain, Efficiency, ACPR versus
Output Power
1
19
15
11
9
13
17
14
15
16
17
10
100
G
,
I
–20
60
50
40
30
20
10
0
,
,
–36
–34
–32
–30
–28
35
40
45
50
1.00
1.25
1.50
1.75
2.00
,
E
I
D
V
Gps
VSWR
–40
–60
–20
20
0
40
60
I
VDD = 26 Vdc
IDQ = 700 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
Gps
IMD
VDD = 26 Vdc
IDQ = 700 mA
f1 = 800.0 MHz
f2 = 800.1 MHz
3rd Order
5th Order
7th Order
Gps
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
Single Tone
Gps
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
750 kHz
1.98 MHz
G
19
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9085S | 制造商:Motorola Inc 功能描述: |
| MRF9100 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9100LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9100R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
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