參數(shù)資料
型號(hào)： MRF9011LT1
廠商： MOTOROLA INC
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 2 MEGABIT 3.3 VOLT SERIAL CONFIGURATION
中文描述： S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 90K
代理商： MRF9011LT1
MMBR901LT1, T3 MRF9011LT1
2–2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
15
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
25
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
2.0
—
—
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
—
—
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 5.0 Vdc)
MMBR901LT1, T3
MRF9011LT1
hFE
50
30
—
80
200
200
—
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 15 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
MRF9011LT1
fT
—
3.8
—
GHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MRF9011LT1
Ccb
—
0.55
1.0
pF
FUNCTIONAL TESTS
Power Gain at Minimum Noise Figure
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
MRF9011LT1
GNFmin
—
13.5
—
dB
Minimum Noise Figure (Figure 3)
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
MRF9011LT1
NFmin
—
1.8
—
dB
Insertion Gain in 50
System
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
MRF9011LT1
S21
2
9.0
10.2
—
dB
Minimum Noise Figure (Figure 3)
(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
SMALL–SIGNAL CHARACTERISTICS
MMBR901LT1, T3
NFmin
—
1.9
—
dB
Output Capacitance
(VCB = 10 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
MMBR901LT1
Cobo
—
—
1.0
pF
Common–Emitter Amplifier Gain
(VCC = 6.0 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
MMBR901LT1
Gpe
—
12
—
dB
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