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參數(shù)資料
| 型號： | MRF9002NR2 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應晶體管陣列N溝道增強型MOSFET的側向 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 403K |
| 代理商： | MRF9002NR2 |
MRF9002NR2
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
15
35
0
17
G
ps
P
out
V
DS
= 26 Vdc
I
DQ
= 25 mA
f = 960 MHz
SingleTone
Gp
33
19.25
31
19
29
18.75
27
18.5
25
18.25
23
18
21
17.75
19
17.5
17
17.25
19.5
2
4
6
8
10
12
14
985
25
41
925
10 dBm
V
DS
= 26 Vdc
I
DQ
= 25 mA
SingleTone
Po
39
37
35
33
31
29
27
975
965
955
945
935
15 dBm
P
in
= 20 dBm
P
in
, INPUT POWER (dBm)
Figure 4. Output Power and Power Gain
versus Input Power
Po
P
out
, OUTPUT POWER (dBm)
Figure 5. Power Gain versus Output Power
Gp
30
19.9
20.3
22
32
28
G
ps
IMD
P
out
= 2 W (PEP)
I
DQ
= 25 mA
f1 = 960.0 MHz, f2 = 960.1 MHz
V
DS
, DRAIN SOURCE SUPPLY (VOLTS)
Figure 6. Power Gain and Intermodulation Distortion
versus Supply Voltage
Gp
20.2
29
20.1
30
20
31
29
28
27
26
25
24
23
I
I
40
65
20
5
25 mA
V
DS
= 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
P
out
, OUTPUT POWER (dBm) PEP
Figure 7. Intermodulation Distortion versus
Output Power
I
I
50 mA
75 mA
100 mA
25
30
35
40
45
50
55
60
35
30
25
20
15
10
40
70
0
10
3rd Order
V
DS
= 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
P
out
, OUTPUT POWER (dBm)
Figure 8. Intermodulation Distortion Products
versus Output Power
I
I
10
20
30
40
50
60
35
30
25
20
15
5th Order
7th Order
f, FREQUENCY (MHz)
Figure 9. Output Power versus Frequency
40
15
23
10
100 mA
V
DS
= 26 Vdc
f = 960 MHz
SingleTone
22
21
20
19
18
17
16
15
20
25
30
35
25 mA
75 mA
50 mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9002R2 | 制造商:MOT 功能描述:_ |
| MRF9002RS | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR ARRAY |
| MRF901 | 制造商:Motorola Inc 功能描述: |
| MRF9011 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The Rf Line NPN Silicon High-Frequency Transistor |
| MRF9011L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The Rf Line NPN Silicon High-Frequency Transistor |
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