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參數(shù)資料
| 型號： | MRF8P8300HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 641K |
| 代理商： | MRF8P8300HR6 |
MRF8P8300HR6 MRF8P8300HSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 790 to 820 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD =28 Volts,IDQ =
2000 mA, Pout = 96 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
790 MHz
20.9
35.2
6.2
--38.1
805 MHz
21.0
35.5
6.2
--38.1
820 MHz
20.9
35.7
6.1
--38.2
Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point
340 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 96 W CW, 28 Vdc, IDQ = 2000 mA, 820 MHz
Case Temperature 85°C, 300 W CW, 28 Vdc, IDQ = 2000 mA, 820 MHz
RθJC
0.26
0.21
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8P8300H
Rev. 0, 1/2011
Freescale Semiconductor
Technical Data
790--820 MHz, 96 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P8300HR6
MRF8P8300HSR6
CASE 375D--05, STYLE 1
NI--1230
MRF8P8300HR6
CASE 375E--04, STYLE 1
NI--1230S
MRF8P8300HSR6
(Top View)
RFoutA/VDSA
31
42 RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2011. All rights reserved.
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