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參數(shù)資料
| 型號： | MRF847 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 64K SERIAL CONFIGURATION PROM |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 319A-07, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 101K |
| 代理商： | MRF847 |
1
MRF847
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for 12.5 volt UHF large–signal,
common–base
amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
806–960 MHz.
Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 45 Watts
Power Gain = 4.5 dB Min
Efficiency = 60% Min
Series Equivalent Large–Signal Characterization
Internally Matched Input for Broadband Operation
Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @
High Line and Rated Drive
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Silicon Nitride Passivated
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
16.5
Vdc
Collector–Base Voltage
38
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
12
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
150
0.85
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
°
C
Junction Temperature
200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.17
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
V(BR)EBO
4.0
—
—
Vdc
V(BR)CEO
16.5
—
—
Vdc
V(BR)CES
38
—
—
Vdc
ICES
—
—
10
mAdc
(continued)
Order this document
by MRF847/D
SEMICONDUCTOR TECHNICAL DATA
45 W, 870 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 1
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