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參數(shù)資料
| 型號： | MRF7S38075HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 435K |
| 代理商： | MRF7S38075HSR3 |
MRF7S38075HR3 MRF7S38075HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 900 mA, Pout = 12 W Avg.,
f = 3400 MHz and f = 3600 MHz, WiMAX Signal, OFDM Single-Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ Pout = 32 W Avg.
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
Mask
—
-27
-38
-42
-60
—
dBc
Relative Constellation Error @ Pout = 12 W Avg. (1)
RCE
—
-34
—
dB
Error Vector Magnitude (1)
(Typical EVM Performance @ Pout = 12 W Avg. with OFDM 802.16d
Signal Call)
EVM
—
2.1
—
% rms
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 900 mA, 3400-3600 MHz Bandwidth
Video Bandwidth @ 84 W PEP Pout where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
—
20
—
MHz
Gain Flatness in 200 MHz Bandwidth @ Pout = 12 W Avg.
GF
—
0.36
—
dB
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ Pout = 75 W CW
Φ
—
3.21
—
°
Average Group Delay @ Pout = 75 W CW, f = 3500 MHz
Delay
—
2.38
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 75 W CW,
f = 3500 MHz, Six Sigma Window
ΔΦ
—
63.4
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.025
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.026
—
dBm/°C
1. RCE = 20Log(EVM/100)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S38075HSR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 12W 30V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF80 | 制造商:Ferraz Shawmut 功能描述: |
| MRF800 | 制造商:Ferraz Shawmut 功能描述: |
| MRF837 | 制造商:Motorola Inc 功能描述: 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF8372 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF LOW POWER TRANSISTOR NPN SILICON |
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