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參數(shù)資料
| 型號(hào)： | MRF7S21110HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 3 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 403K |
| 代理商： | MRF7S21110HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S21110HR3 MRF7S21110HSR3
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
2220
2060
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 33 Watts Avg.
2160
2120
2100
17.6
16.8
2.5
36
35
34
33
32
0
0.5
1
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
20
4
8
12
16
η
D
,DRAIN
EFFICIENCY
(%)
2140
G
ps
,POWER
GAIN
(dB)
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 70 Watts Avg.
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
η
D
,DRAIN
EFFICIENCY
(%)
Figure 5. Two-Tone Power Gain versus
Output Power
100
13
19
1
IDQ = 1650 mA
1375 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two Tone Measurements, 10 MHz Tone Spacing
550 mA
1100 mA
18
17
16
10
300
G
ps
,POWER
GAIN
(dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10
IDQ = 550 mA
Pout, OUTPUT POWER (WATTS) PEP
1375 mA
825 mA
1100 mA
10
20
30
40
100
60
50
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two Tone Measurements, 10 MHz Tone Spacing
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
PARC
825 mA
300
2080
2200
2180
17.4
17.2
17
16.6
16.4
16.2
16
15.8
15.6
1.5
2
0
4
8
12
16
0
16.6
15.8
4
50
49
48
47
46
2
2.5
3
16.4
16.2
16
15.6
15.4
15.2
15
14.8
3.5
15
VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 1100 mA
Single Carrier WCDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
2220
2060
2160
2120
2100
2140
2080
2200
2180
VDD = 28 Vdc, Pout = 70 W (Avg.), IDQ = 1100 mA
Single Carrier WCDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21110HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 33W WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21150HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21150HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S21150HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21150HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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