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參數(shù)資料
| 型號： | MRF6VP41KHSR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375E-04, NI-1230S, 4 PIN |
| 文件頁數(shù)： | 9/18頁 |
| 文件大?。?/td> | 1292K |
| 代理商： | MRF6VP41KHSR6 |
MRF6VP41KHR6 MRF6VP41KHSR6
17
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2008
Initial Release of Data Sheet
1
Apr. 2008
Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
2
Sept. 2008
Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
measured separately, p. 5
Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the
MTTF factor accordingly, p. 6
3
Nov. 2008
Added CW operation capability bullet to Features section, p. 1
Added CW operation to Maximum Ratings table, p. 1
Added CW thermal data to Thermal Characteristics table, p. 2
Fig. 14, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit
impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to show
push--pull test conditions, p. 7
4
Mar. 2009
CW rating limits updated from 1176 W to 1107 W and 5.5 W/°Cto4.6 W/°C to reflect recent remeasured
data, Max Ratings table, p. 1
CW Thermal Characteristics changed from 81°Cto48°C and 0.16 °C/W to 0.15 °C/W using data from the
most recent 352.2 MHz CW application circuit, p. 2
Added Typical Performances table for 352.2 MHz and 500 MHz applications, p. 3
Added Fig. 14, MTTF versus Junction Temperature -- CW, p. 7
Added Figs. 16 and 18, Test Circuit Component Layout -- 352.2 MHz and 500 MHz, and Tables 6 and 7, Test
Circuit Component Designations and Values -- 352.2 MHz and 500 MHz, p. 9, 11
Added Figs. 17 and 19, Series Equivalent Source and Load Impedance -- 352.2 MHz and 500 MHz, p. 10, 12
5
Apr. 2010
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 17
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP41KHSR7 | 功能描述:射頻MOSFET電源晶體管 VHV6 450MHZ1000W NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF750 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF TRANSISTOR |
| MRF752 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF TRANSISTOR |
| MRF7P20040HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2GHZ 40W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7P20040HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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