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參數(shù)資料
| 型號： | MRF6VP3091NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN |
| 文件頁數(shù)： | 2/18頁 |
| 文件大?。?/td> | 749K |
| 代理商： | MRF6VP3091NR1 |
10
RF Device Data
Freescale Semiconductor
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT
26
10
70
f, FREQUENCY (MHz)
Figure 21. Single--Carrier DVB--T (8k OFDM) Power Gain
and Drain Efficiency versus Frequency
450
50
40
30
20
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
Gps
ηD
G
ps
,P
OWER
GAIN
(d
B)
60
Pout =4.5 W
9W
VDD =50 Vdc,IDQ = 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
24
22
20
18
16
14
500
550
600
650
700
750
800
850
900
18 W
4.5 W
9W
18 W
12
--50
10
f, FREQUENCY (MHz)
Figure 22. Single--Carrier DVB--T (8k OFDM) Output PAR
and IMD Shoulder versus Frequency
450
--10
--20
--30
--40
OU
TPU
T
PAR
(d
B)
0
Pout =4.5 W
9W
VDD =50 Vdc,IDQ = 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
10
8
6
4
2
0
500
550
600
650
700
750
800
850
900
18 W
4.5 W
9W
18 W
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
26
20
80
Pout, OUTPUT POWER (WATTS) PULSED
Figure 23. Pulsed Power Gain and Drain Efficiency
versus Output Power
0
60
50
40
30
Gps
ηD
70
VDD =50 Vdc,IDQ = 450 mA
Pulse Width = 100 μsec, 10% Duty Cycle
24
22
20
18
16
14
20
40
60
80
100
120
140
160
470 MHz
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
G
ps
,P
OWER
GAIN
(d
B)
600 MHz
750 MHz
600 MHz
470 MHz
860 MHz
PAR
IMD(1)
IM
D,
INT
ERM
O
DULA
TIO
N
DI
ST
OR
TION
SH
OU
LD
ER
(d
Bc)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6VP3091NBR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6VP3091NR5 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6VP3450HR5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP3450HR6 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP3450HSR6 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP3091NR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3450HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 450W 860MHZ NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3450HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP3450H Series 470 - 860 MHz 110 V N-Channel RF Power Mosfet |
| MRF6VP3450HR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 450W 860MHZ NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3450HR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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