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參數(shù)資料
| 型號： | MRF6V3090NR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4 |
| 文件頁數(shù)： | 15/17頁 |
| 文件大小： | 928K |
| 代理商： | MRF6V3090NR5 |
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — OFDM
12
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 13. Single--Carrier DVB--T OFDM
10
1
0.1
0.01
0.001
24
6
8
PR
OBABIL
ITY
(%
)
8K Mode DVB--T OFDM
64 QAM Data Carrier Modulation
5 Symbols
5
--20
--5
7.61 MHz
f, FREQUENCY (MHz)
Figure 14. 8K Mode DVB--T OFDM Spectrum
--30
--40
--50
--90
--70
--80
--100
--110
--60
--4
--3
--2
--1
0
1
2
3
4
4kHz BW
(dB
)
10
ACPR Measured at 4 MHz Offset
from Center Frequency
Figure 15. Single--Carrier DVB--T OFDM Power
Gain versus Output Power
23
1
IDQ = 450 mA
Pout, OUTPUT POWER (WATTS) AVG.
10
40
G
ps
,P
OWER
GAIN
(d
B)
350 mA
VDD = 50 Vdc, f = 860 MHz
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
22.5
22
21.5
21
20.5
AC
PR
,A
DJ
AC
EN
T
CH
AN
NE
L
POWER
RA
TIO
(d
Bc)
Figure 16. Single--Carrier DVB--T OFDM ACPR
versus Output Power
--68
--54
1
Pout, OUTPUT POWER (WATTS) AVG.
--56
10
40
--60
VDD = 50 Vdc, f = 860 MHz
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
--62
IDQ = 250 mA
300 mA
--64
--66
AC
PR
,A
DJ
AC
EN
T
CH
AN
NE
L
POWER
RA
TIO
(d
Bc)
Figure 17. Single--Carrier DVB--T OFDM ACPR Power
Gain and Drain Efficiency versus Output Power
0
--70
Pout, OUTPUT POWER (WATTS) AVG.
50
--45
30
10
--50
1
--60
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
),
G
ps
,P
OWER
GAIN
(d
B)
40
20
--55
10
--65
ηD
25_C
TC =--30_C
85_C
Gps
ACPR
VDD =50 Vdc,IDQ = 350 MHz
f = 860 MHz, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
4kHz BW
8K Mode DVB--T OFDM
64 QAM Data Carrier Modulation, 5 Symbols
250 mA
300 mA
--58
350 mA
450 mA
25_C
--30_C
85_C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V4300NBR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V4300NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V4300NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V4300 Series 600 MHz 110 V RF Power N-Channel Mosfet - TO-272-4 |
| MRF6V4300NR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V4300NR1_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |