參數(shù)資料
型號(hào)： MRF6S9060NBR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝： ROHS COMPLIANT, PLASTIC, CASE 1337-03, 2 PIN
文件頁(yè)數(shù)： 9/18頁(yè)
文件大?。?/td> 784K
代理商： MRF6S9060NBR1
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MRF6S9060NR1 MRF6S9060NBR1
17
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
4
Aug. 2008
Listed replacement part and Device Migration notification reference number, p. 1
Listed MRF6S9060NBR1 as no longer manufactured, p. 1
Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 11-13. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min-Max .290-.320 to .290 Min; E3 changed from Min-Max .150-.180 to .150 Min). Added JEDEC
Standard Package Number.
Replaced Case Outline 1337-03 with 1337-04, p. 1, 14-16. Issue D: Removed Drain-ID label from View
Y-Y on Sheet 2. Renamed E2 to E3. Added cross-hatch region dimensions D2 and E2. Added JEDEC
Standard Package Number. Issue E: Corrected document number 98ASA99191D on Sheet 3.
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 8
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 8
Added Product Documentation and Revision History, p. 17
相關(guān)PDF資料
PDF描述
MRF6S9060NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S9125MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S9125MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S9125NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S9125NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S9060NR1 功能描述:MOSFET RF N-CH 28V 14W TO-270-2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9125 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S9125MBR1 功能描述:MOSFET RF N-CH 28V 27W TO-272-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9125MR1 功能描述:MOSFET RF N-CH 28V 27W TO-270-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9125N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
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