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參數(shù)資料
| 型號： | MRF6S27050HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 466K |
| 代理商： | MRF6S27050HR3 |
MRF6S27050HR3 MRF6S27050HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
25
5
10
15
20
2700
2500
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier W-CDMA Broadband Performance
@ Pout = 7 Watts Avg.
VDD = 28 Vdc, Pout = 7 W (Avg.), IDQ = 500 mA
SingleCarrier WCDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
2640
2620
2600
2580
2560
2540
2520
11
19
18
17
16
15
14
13
12
70
24
23
22
21
20
40
50
60
η
D
,DRAIN
EFFICIENCY
(%)
ηD
2680
2660
ALT1
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
25
5
10
15
20
2700
2500
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier W-CDMA Broadband Performance
@ Pout = 14 Watts Avg.
VDD = 28 Vdc, Pout = 14 W (Avg.)
IDQ = 500 mA, SingleCarrier WCDMA
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
2640
2620
2600
2580
2560
2540
2520
11
19
18
17
16
15
14
13
12
60
34
33
32
31
30
40
50
η
D
,DRAIN
EFFICIENCY
(%)
ηD
2680
2660
ALT1
Figure 5. Two-Tone Power Gain versus
Output Power
12
20
1
IDQ = 1000 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc
f1 = 2598.75 MHz, f2 = 2601.25 MHz
TwoTone Measurements
125 mA
18
17
16
10
100
G
ps
,POWER
GAIN
(dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
45
15
0.5
IDQ = 125 mA
Pout, OUTPUT POWER (WATTS) PEP
10
20
25
30
35
40
100
55
50
VDD = 28 Vdc, f1 = 2598.75 MHz, f2 = 2601.25 MHz
TwoTone Measurements
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
750 mA
500 mA
250 mA
19
15
14
13
750 mA
500 mA
250 mA
1000 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S27050HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27050HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ WCDMA NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27050HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ WCDMA NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27085HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27085HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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