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參數(shù)資料
| 型號(hào)： | MRF6S23140HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-03, 2 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 432K |
| 代理商： | MRF6S23140HSR3 |
MRF6S23140HR3 MRF6S23140HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
300
11
17
0.5
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus Output Power
VDD = 28 Vdc
IDQ = 1300 mA
f = 2350 MHz
TC = 30_C
25
_C
30
_C
100
10
16
15
14
13
12
50
40
30
20
10
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
η
D
,DRAIN
EFFICIENCY
(%)
ηD
Gps
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
250
11
16
0
200
50
12
100
150
14
13
15
IDQ = 1300 mA
f = 2350 MHz
85
_C
25
_C
85
_C
28 V
32 V
Figure 12. MTTF Factor versus Junction Temperature
1
VDD = 24 V
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 28 W Avg., and ηD = 25%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S23140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S24140H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S24140HR3 | 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 W-CDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S24140HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S24140HR5 | 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 W-CDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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