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參數(shù)資料
| 型號： | MRF6S23100HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 411K |
| 代理商： | MRF6S23100HR3 |
6
RF Device Data
Freescale Semiconductor
MRF6S23100HR3 MRF6S23100HSR3
TYPICAL CHARACTERISTICS
11
18
0.1
0
70
Pout, OUTPUT POWER (WATTS) CW
10
16
14
12
60
50
40
30
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
15
13
VDD = 28 Vdc
IDQ = 1000 mA
f = 2350 MHz
ηD
Gps
IM3
(dBc),
ACPR
(dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
-1 0
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
5th Order
3rd Order
-2 0
-3 0
-4 0
1
100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
-55
Pout, OUTPUT POWER (WATTS) AVG.
35
-20
-30
25
20
-35
10
100
-40
40
57
P3dB = 51.88 dBm (154.14 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1000 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2350 MHz
53
49
47
34
33
36
Actual
Ideal
55
51
32
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
P
out
,OUTPUT
POWER
(dBm)
G
ps
,POWER
GAIN
(dB)
160
10
16
0
12
11
20
13
14
IDQ = 1000 mA
f = 2350 MHz
30
-45
ηD
ACPR
VDD = 24 V
28 V
32 V
38
1
-25
40
60
80
10
20
P1dB = 51.18 dBm (131.19 W)
15
TC = 25_C
-30
_C
85
_C
25
_C
TC = -30_C
85
_C
25
_C
85
_C
-30
_C
100
25
_C
15
100
VDD = 28 Vdc, IDQ = 1000 mA
f1 = 2345 MHz, f2 = 2355 MHz
2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
39
37
35
5
-50
-30
_C
85
_C
25
_C
25
_C
17
1
120
140
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S23100HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S23100HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HXX | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Dield Effect Transistors |
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