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參數(shù)資料
| 型號(hào)： | MRF6S23100H |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Dield Effect Transistors |
| 中文描述： | 射頻功率Dield場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 416K |
| 代理商： | MRF6S23100H |
2
RF Device Data
Freescale Semiconductor
MRF6S23100HR3 MRF6S23100HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 250
μ
Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1000 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
V
DS(on)
0.1
0.21
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
5.3
—
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.5
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, P
out
= 20 W Avg., f1 = 2300 MHz,
f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @
±
5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @
±
10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G
ps
14
15.4
17
dB
Drain Efficiency
η
D
22.5
23.5
—
%
Intermodulation Distortion
IM3
-35
-37
—
dBc
Adjacent Channel Power Ratio
ACPR
-38
-40.5
—
dBc
Input Return Loss
IRL
—
-10
—
dB
1. Part is internally matched both on input and output.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S23100HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S23100HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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