- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄98039 > MRF6S21190HR3 (FREESCALE SEMICONDUCTOR INC) S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF6S21190HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 418K |
| 代理商： | MRF6S21190HR3 |
MRF6S21190HR3 MRF6S21190HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
2220
2060
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 54 Watts Avg.
2160
2120
2100
13.5
18.5
18
17.5
17
2.5
34
32
30
28
0
1
1.5
2
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
24
4
8
16
20
η
D
,DRAIN
EFFICIENCY
(%)
2140
2080
2200
2180
G
ps
,POWER
GAIN
(dB)
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 86 Watts Avg.
12.5
17
16.5
16
15.5
15
14.5
14
13.5
4
42
38
36
34
2
2.5
3
3.5
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
25
5
10
15
20
η
D
,DRAIN
EFFICIENCY
(%)
Figure 5. Two-Tone Power Gain versus
Output Power
100
13
18
1
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
17
16
10
200
G
ps
,POWER
GAIN
(dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
20
Pout, OUTPUT POWER (WATTS) PEP
10
30
40
100
60
50
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurements, 10 MHz Tone Spacing
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
200
IDQ = 2400 mA
2000 mA
IDQ = 800 mA
2000 mA
2400 mA
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
VDD = 28 Vdc, Pout = 86 W (Avg.), IDQ = 1600 mA
SingleCarrier WCDMA, 3.84 MHz Channel Banwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
15
1600 mA
1200 mA
800 mA
1200 mA
1600 mA
14
14.5
15
15.5
16
16.5
0.5
26
VDD = 28 Vdc, Pout = 54 W (Avg.), IDQ = 1600 mA
12
2220
2060
2160
2120
2100
2140
2080
2200
2180
13
40
14
ηD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S23100HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S23140HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S23140HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S27050HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S27050HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S21190HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21190HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21190HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.1GHZ 54W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100H | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S23100HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。