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參數(shù)資料
| 型號： | MRF6S21050LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-400, CASE 465E-04, 2 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 392K |
| 代理商： | MRF6S21050LR3 |
6
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
TYPICAL CHARACTERISTICS
100
13
16.5
3
8
64
Pout, OUTPUT POWER (WATTS) CW
10
16
15
14
56
48
40
32
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
15.5
14.5
13.5
VDD = 28 Vdc
IDQ = 450 mA
f = 2140 MHz
ηD
Gps
IM3
(dBc),
ACPR
(dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
10
0.01
7th Order
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 450 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
20
30
40
50
1
100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
60
Pout, OUTPUT POWER (WATTS) AVG. WCDMA
40
20
25
30
20
35
15
40
5
50
0.2
10
30
45
10
36
52
P3dB = 48.66 dBm (73.43 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 450 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
50
48
46
44
30
29
32
31
35
Actual
Ideal
P1dB = 47.89 dBm (61.52 W)
51
49
45
47
28
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
P
out
,OUTPUT
POWER
(dBm)
G
ps
,POWER
GAIN
(dB)
VDD = 24 V
100
12
17
090
10
14
13
20
30
15
14.5
16
IDQ = 450 mA
f = 2140 MHz
30
55
ηD
ACPR
28 V
32 V
0.1
33
34
35
1
25
16.5
15.5
13.5
12.5
40
50
60
70
80
VDD = 28 Vdc, IDQ = 450 mA, f1 = 2135 MHz
f2 = 2145 MHz, 2 x WCDMA, 10 MHz @ 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
16
24
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PDF描述 |
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| MRF6S21060NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S21060NBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S21100HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S21100HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S21100NBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S21050LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21050LR5 | 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21050LS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S21050LSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21050LSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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