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參數(shù)資料
| 型號(hào)： | MRF6S19100HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 407K |
| 代理商： | MRF6S19100HR3 |
MRF6S19100HR3 MRF6S19100HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
20
5
10
15
η
D
,DRAIN
EFFICIENCY
(%)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
1990
1930
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 22 Watts Avg.
20
5
10
15
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 900 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1970
1960
1940
15.4
16.6
53
29
27
25
35
41
47
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 44 Watts Avg.
VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 900 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
14.8
16.2
16
45
42
40
38
25
30
35
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
13
18
1
IDQ = 1300 mA
1125 mA
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
17
16
15
10
300
30
15
1
IDQ = 450 mA
900 mA
100
20
25
300
55
50
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
10
1990
1930
1970
1960
1940
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
G
ps
,POWER
GAIN
(dB)
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
16.4
16.2
16
15.8
15.6
1950
1980
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
15.8
15.6
15.4
15.2
15
1950
1980
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
14
900 mA
675 mA
450 mA
1300 mA
1125 mA
35
40
45
675 mA
40
ηD
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| MRF6S19100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S19100HR3_06 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR3_08 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19100HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 WCDMA 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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