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參數(shù)資料
| 型號： | MRF6S19100HR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 398K |
| 代理商： | MRF6S19100HR3 |
MRF6S19100HR3 MRF6S19100HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
20
5
10
15
η
D
,
E
I
I
1990
1930
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ P
out
= 22 Watts Avg.
20
5
10
15
V
DD
= 28 Vdc, P
out
= 22 W (Avg.), I
DQ
= 900 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1970
1960
1940
15.4
16.6
53
29
27
25
35
41
47
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ P
out
= 44 Watts Avg.
V
DD
= 28 Vdc, P
out
= 44 W (Avg.), I
DQ
= 900 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
14.8
16.2
16
45
42
40
38
25
30
35
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
13
18
1
I
DQ
= 1300 mA
1125 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
17
16
15
10
300
30
15
1
I
DQ
= 450 mA
900 mA
100
20
25
300
55
50
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
10
1990
1930
1970
1960
1940
η
D
,
E
η
D
G
p
,
I
I
G
p
,
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
G
p
,
I
I
16.4
16.2
16
15.8
15.6
1950
1980
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
15.8
15.6
15.4
15.2
15
1950
1980
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
14
900 mA
675 mA
450 mA
1300 mA
1125 mA
35
40
45
675 mA
40
η
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S19100HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19100HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 WCDMA 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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