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參數(shù)資料
| 型號： | MRF6S19060NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 607K |
| 代理商： | MRF6S19060NR1 |
MRF6S19060NR1 MRF6S19060NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
30
10
14
22
26
2000
1900
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 12 Watts Avg.
1990
1960
1950
1940
1930
1920
1910
16.6
60
27
26.5
26
25.5
25
36
42
54
η
D
,DRAIN
EFFICIENCY
(%)
ηD
16.5
16.4
16.3
16.2
16.1
16
15.9
15.8
15.7
1970 1980
48
30
18
VDD = 28 Vdc, Pout = 12 W (Avg.)
IDQ = 610 mA, 2Carrier NCDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
30
10
14
22
26
2000
1900
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 24 Watts Avg.
1990
1960
1950
1940
1930
1920
1910
16.2
45
38.5
38
37.5
37
36.5
25
30
40
η
D
,DRAIN
EFFICIENCY
(%)
ηD
16.1
16
15.9
15.8
15.7
15.6
15.5
15.4
15.3
1970 1980
35
20
18
VDD = 28 Vdc, Pout = 24 W (Avg.)
IDQ = 610 mA, 2Carrier NCDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
Figure 5. Two-Tone Power Gain versus
Output Power
10
12
18
1
IDQ = 915 mA
763 mA
Pout, OUTPUT POWER (WATTS) PEP
200
G
ps
,POWER
GAIN
(dB)
17
16
15
13
610 mA
458 mA
305 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10
110
20
30
40
200
60
50
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
IDQ = 305 mA
915 mA
763 mA
458 mA
610 mA
15.2
14
100
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
100
相關PDF資料 |
PDF描述 |
|---|---|
| MRF6S19060NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S19100HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S19100HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S19100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S19100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S19060NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S19100GNR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 22W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19100HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19100HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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