參數(shù)資料
型號： MRF6S18140HR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN
文件頁數(shù)： 8/12頁
文件大?。?/td> 435K
代理商： MRF6S18140HR3
AR
C
HIVE
INF
O
RMA
TI
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N
ARCHIVE
INFORMA
TION
MRF6S18140HR3 MRF6S18140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
1920
1760
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 29 Watts Avg.
-20
0
-4
-8
-12
VDD = 28 Vdc, Pout = 29 W (Avg.)
IDQ = 1200 mA, 2-Carrier N-CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
1880
1840
1800
14.8
16.8
-54
30
29
28
26
-24
-30
-36
-42
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
16.6
16.4
16.2
16
15.8
15.6
15.4
15.2
15
1780
1820
1860
1900
27
-48
-16
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
1920
1760
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 60 Watts Avg.
-20
0
-4
-8
-12
VDD = 28 Vdc, Pout = 60 W (Avg.)
IDQ = 1200 mA, 2-Carrier N-CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
1880
1840
1800
14.4
16.4
-42
42
41
40
38
-12
-18
-24
-30
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
16.2
16
15.8
15.6
15.4
15.2
15
14.8
14.6
1780
1820
1860
1900
39
-36
-16
Figure 5. Two-T one Power Gain versus
Output Power
100
13
19
1
IDQ = 1800 mA
1500 mA
VDD = 28 Vdc
f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
18
17
15
10
400
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
14
16
900 mA
1200 mA
600 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
-1 0
1
100
-2 0
-3 0
-4 0
400
-60
-5 0
VDD = 28 Vdc
f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
10
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
IDQ = 600 mA
1500 mA
900 mA
1200 mA
1800 mA
相關(guān)PDF資料
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MRF6S18140HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S18140HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S1900HSR3 制造商:Freescale Semiconductor 功能描述:
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