參數(shù)資料
型號(hào)： MRF6S18100NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
文件頁(yè)數(shù)： 3/21頁(yè)
文件大?。?/td> 764K
代理商： MRF6S18100NR1
MRF6S18100NR1 MRF6S18100NBR1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 1805-1880 MHz
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
12
1800
20
Gps
VDD = 28 Vdc
IDQ = 900 mA
17
60
50
40
30
1880
IRL
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 100 Watts
30
0
10
20
40
η
D
,DRAIN
EFFICIENCY
(%)
16
15
14
ηD
1810
1820
1830
1840
1850
13
1860
1870
1800
1880
1810
1820
1830
1840
1850
1860
1870
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
13
20
Gps
VDD = 28 Vdc
IDQ = 900 mA
16
50
40
30
IRL
Figure 19. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 40 Watts
30
10
20
40
η
D
,DRAIN
EFFICIENCY
(%)
15
14
ηD
Figure 20. EVM versus Frequency
f, FREQUENCY (MHz)
Pout = 60 W Avg.
42 W Avg.
25 W Avg.
VDD = 28 Vdc
IDQ = 700 mA
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
1900
1
6
3
1880
1860
1840
1800
4
2
5
1820
Figure 21. EVM and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) AVG.
100
4
10
VDD = 28 Vdc
IDQ = 700 mA
f = 1840 MHz
EDGE Modulation
8
6
0
10
1
2
20
50
40
30
0
10
η
D
,DRAIN
EFFICIENCY
(%)
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
TC = 25_C
ηD
EVM
10
相關(guān)PDF資料
PDF描述
MRF6S18140HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S18140HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S19060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S19060NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S19100HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S18100NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*