參數(shù)資料
型號(hào)： MRF6P9220HR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁數(shù)： 8/12頁
文件大小： 458K
代理商： MRF6P9220HR3
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
MRF6P9220HR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
17
11
15
910
850
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout = 47 Watts Avg.
900
890
880
870
860
21
20.4
70
31
28
55
60
65
η
D
,DRAIN
EFFICIENCY
(%)
ηD
19.2
18.9
18.3
18
20.7
20.1
19.8
29
27
45
9
13
18.6
19.5
30
50
7
ALT1
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
17
11
15
910
850
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout = 94 Watts Avg.
900
890
880
870
860
20
19.6
60
42
39
45
50
55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
18.8
18.6
18.2
18
19.8
19.4
19.2
40
38
35
9
13
18.4
19
41
40
7
ALT1
Figure 5. Two-Tone Power Gain versus
Output Power
17
20.5
3
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
20
19
100
500
G
ps
,POWER
GAIN
(dB)
17.5
1600 mA
19.5
18.5
18
10
1200 mA
800 mA
VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz
TwoTone Measurements, 100 kHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
20
30
40
50
60
10
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
10
IDQ = 800 mA
2000 mA
1200 mA
1600 mA
VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz
TwoTone Measurements, 100 kHz Tone Spacing
500
5
2400 mA
VDD = 28 Vdc, Pout = 47 W (Avg.)
IDQ = 1600 mA, NCDMA IS95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
VDD = 28 Vdc, Pout = 94 W (Avg.)
IDQ = 1600 mA, NCDMA IS95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
相關(guān)PDF資料
PDF描述
MRF6S18060MR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S18060MBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S18060NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S18060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S18100NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6P9220HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR5 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S18060MBR1 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18060NBR1 功能描述:射頻MOSFET電源晶體管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*