參數(shù)資料
型號(hào)： MRF6P27160HR6
廠(chǎng)商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述： RF功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 446K
代理商： MRF6P27160HR6
MRF6P27160HR6
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6P27160HR6 Test Circuit Schematic
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z32
Z33
Z34, Z35
Z36, Z37
PCB
0.160
″
x 0.760
″
Microstrip
0.240
″
x 0.150
″
Microstrip
0.170
″
x 0.420
″
Microstrip
0.260
″
x 0.080
″
Microstrip
0.040
″
x 0.258
″
Microstrip
0.622
″
x 0.139
″
Microstrip
0.346
″
x 0.081
″
Microstrip
0.801
″
x 0.050
″
Microstrip
0.460
″
x 0.095
″
Microstrip
Arlon GX-0300-5022, 0.030
″
,
ε
r
= 2.5
Z1
Z2, Z31
Z3, Z30
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
1.011
″
x 0.139
″
Microstrip
0.150
″
x 0.070
″
Microstrip
1.500
″
x 0.086
″
Microstrip
0.050
″
x 0.230
″
Microstrip
0.170
″
x 0.080
″
Microstrip
0.144
″
x 0.340
″
Microstrip
0.400
″
x 0.210
″
Microstrip
0.280
″
x 0.710
″
Microstrip
0.461
″
x 0.490
″
Microstrip
0.357
″
x 0.766
″
Microstrip
0.284
″
x 0.415
″
Microstrip
RF
INPUT
C5
C7
+
C3
V
BIAS
B1
Z5
Z7
Z9
Z13
C1
Z4
Z6
Z8
Z12
C2
Z1
Z2
DUT
C16
C17
C18
+
V
SUPPLY
Z17
Z19
Z21
Z23
C13
RF
OUTPUT
Z32
Z33
Z3
Z31
C6
+
Z35
C4
Z11
Z10
Z15
Z14
Z37
C19
+
C10
C12
+
C8
V
BIAS
B2
C11
+
Z34
C9
Z25
Z27
Z29
Z16
Z18
Z20
Z22
C14
Z30
Z24
Z26
Z28
C21
C22
C23
+
V
SUPPLY
Z36
C24
+
R1
R2
C15
C20
Table 5. MRF6P27160HR6 Test Circuit Component Designations and Values
Part
B1, B2
Beads, Surface Mount
C1, C2
5.6 pF Chip Capacitors
C3, C8, C15, C20
3.3 pF Chip Capacitors
C4, C9
0.01
μ
F Chip Capacitors (1825)
C5, C10
2.2
μ
F, 50 V Chip Capacitors (1825)
C6, C11
22
μ
F, 25 V Tantalum Chip Capacitors
C7, C12
47
μ
F, 16 V Tantalum Chip Capacitors
C13, C14
4.3 pF Chip Capacitors
C16, C17, C21, C22
10
μ
F, 50 V Chip Capacitors (2220)
C18, C23
47
μ
F, 50 V Electrolytic Capacitors
C19, C24
330
μ
F, 63 V Electrolytic Capacitors
R1, R2
3.3 , 1/4 W Chip Resistors (1210)
Description
Part Number
Manufacturer
Fair-Rite
ATC
ATC
Kemet
Kemet
Panasonic TE Series
Kemet
ATC
Murata
Nippon
Nippon
Dale/Vishay
2743019447
100B5R6CP500X
100B3R3CP500X
C1825C103J1RAC
C1825C225J5RAC
ECS-T1ED226R
T491D476K016AS
100B4R3CP500X
GRM55DR61H106KA88B
MVK50VC47RM8X10TP
NACZF331M63V
ERJ-14YJ3R3U
相關(guān)PDF資料
PDF描述
MRF6P27160H RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P3300HR3 RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)
MRF6P3300HR5 RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)
MRF6P3300H RF Power Field Effect Transistor
MRF6P9220HR3 880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6P27160HR6_06 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P3300H 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P3300HR3 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6P3300HR3_06 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P3300HR5 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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