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參數(shù)資料
| 型號(hào)： | MRF6P21190HR6 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場(chǎng)效應(yīng)晶體管，N溝道增強(qiáng)型MOSFET的側(cè)向 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 400K |
| 代理商： | MRF6P21190HR6 |
6
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
55
15
0.1
7th Order
TWOTONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 190 W (PEP), I
DQ
= 1900 mA
TwoTone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
20
30
40
45
50
1
100
I
25
35
Figure 8. Pulse CW Output Power versus
Input Power
44
58
34
P3dB = 54.45 dBm (279 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1900 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
f = 2140 MHz
56
54
52
47
36
38
40
42
Actual
Ideal
P1dB = 53.7 dBm (233 W)
57
48
32
P
o
,
50
I
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
60
P
out
, OUTPUT POWER (WATTS) AVG.
30
30
25
20
35
15
40
5
50
1
10
100
45
10
η
D
,
p
,
55
IM3
η
D
G
ps
ACPR
300
0
18
0
60
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1900 mA
f = 2140 MHz
100
10
15
12
9
6
3
50
40
30
20
10
η
D
,
D
G
ps
η
D
G
p
,
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 28 V
G
p
,
500
6
18
10
16
10
8
100
12
14
24 V
I
DQ
= 1900 mA
f = 2140 MHz
20 V
16 V
12 V
V
DD
= 28 Vdc, I
DQ
= 1900 mA
f1 = 2135 MHz, f2 = 2145 MHz
2Carrier WCDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
3
3
55
53
51
49
33
35
37
39
41
43
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P21190HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P21190HR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P23190H_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P23190HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P23190HR6 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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