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參數(shù)資料
| 型號： | MRF6522-60 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF MOSFETS(RF MOS場效應(yīng)管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360B-04, 3 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 186K |
| 代理商： | MRF6522-60 |
MRF6522–60
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
P
,
o
P
,
o
Pin, INPUT POWER (WATTS)
800
90
f, FREQUENCY (MHz)
70
0
50
20
0
820
840
860
880
920
1000
0.5
1.5
2.5
3.5
60
50
40
20
0
70
10
30
1.0
2.0
3.0
VDD, SUPPLY VOLTAGE (VOLTS)
0
16
Pout, OUTPUT POWER (WATTS)
Figure 2. Power Gain versus Output Power
Figure 3. Output Power versus Supply Voltage
80
15
12
10
100
18
22
30
32
70
60
50
40
30
14
13
20
26
0
6
VDS, DRAIN VOLTAGE (Vdc)
I
D
5
0
5
10
15
20
25
35
4
3
1
Figure 4. Output Power versus Frequency
Figure 5. Output Power versus Input Power
Figure 6. DC Safe Operating Area
900
960
2
VDD = 28 Vdc
f = 960 MHz
VDD = 28 Vdc
IDQ = 400 mA
SINGLE TONE
12
14
20
0
10
16
VDD = 28 Vdc
IDQ = 400 mA
f = 960 MHz
TJ = 150
°
C
TF = 70
°
C
η
Pout
Gp
IDQ = 600 mA
400 mA
250 mA
100 mA
24
28
P
,
o
80
40
60
940
980
Pin = 4.0 W
2.0 W
1.0 W
Pin = 2.5 W
1.0 W
0.5 W
30
60
30
0
50
40
10
η
,
20
30
10
VDD = 28 Vdc
IDQ = 400 mA
f = 960 MHz
Figure 7. Drain Current versus Gate Voltage
I
4
3
2
0
0
1
3
5
6
VGS, GATE VOLTAGE (VOLTS)
VDS = 28 Vdc
TYPICAL DEVICE SHOWN
2
4
3.5
2.5
1
0.5
1.5
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MRF6522-70 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6522-70R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6522--70R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6522-70R3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6522-70R3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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