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參數(shù)資料
| 型號(hào)： | MRF6409 |
| 廠(chǎng)商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 319-07, 6 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 426K |
| 代理商： | MRF6409 |
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INFORMA
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1
MRF6409
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF6409 is designed for GSM base stations applications. It incorpo-
rates high value emitter ballast resistors, gold metallizations and offers a high
degree of reliability and ruggedness.
To be used in Class AB
Specified 26 Volts, 960 MHz Characteristics
Output Power — 20 Watts CW
Gain — 11 dB Typ
Efficiency — 60% Typ
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
24
Vdc
Collector–Emitter Voltage
VCES
55
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector–Current — Continuous
IC
5.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
45
0.26
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
RθJC
3.8
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
24
30
—
Vdc
Emitter–Base Breakdown Voltage
(IB = 5.0 mAdc, IC =0)
V(BR)EBO
4.0
5.0
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CES
55
60
—
Vdc
Collector–Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ICES
—
6.0
mA
(1) Thermal resistance is determined under specified RF operating condition.
Order this document
by MRF6409/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF6409
20 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 2
Motorola, Inc. 1997
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