參數(shù)資料
型號： MRF5S9070MR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1265-08, 2 PIN
文件頁數(shù)： 5/12頁
文件大?。?/td> 569K
代理商： MRF5S9070MR1
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HIVE
INF
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RMA
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ARCHIVE
INFORMA
TION
2
RF Device Data
Freescale Semiconductor
MRF5S9070MR1
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
VGS(th)
2
2.7
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
—
0.18
0.22
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
gfs
—
4.7
—
S
Dynamic Characteristic
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
126
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
34
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.37
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg., f = 880 MHz, Single-Carrier
N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. Peak/Avg. Ratio =
9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
17
17.8
—
dB
Drain Efficiency
ηD
29
30
—
%
Adjacent Channel Power Ratio
ACPR
—
-47
-45
dBc
Input Return Loss
IRL
—
-19
-9
dB
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 921-960 MHz, 50 οhm system) VDD = 26 Vdc,
IDQ = 400 mA, Pout = 60 W, f = 921-960 MHz
Power Gain
Gps
—
16.4
—
dB
Drain Efficiency
ηD
—
62
—
%
Input Return Loss
IRL
—
-12
—
dB
Pout @ 1 dB Compression Point
(f = 940 MHz)
P1dB
—
68
—
W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921-960 MHz, 50 οhm system)
VDD = 26 Vdc, IDQ = 400 mA, Pout = 25 W Avg., f = 921-960 MHz, GSM EDGE Signal
Power Gain
Gps
—
17
—
dB
Drain Efficiency
ηD
—
44
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
-62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-78
—
dBc
(continued)
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