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參數(shù)資料
| 型號： | MRF5S21130HSR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 375K |
| 代理商： | MRF5S21130HSR3 |
MRF5S21130HR3 MRF5S21130HSR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
2220
2060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
IM3
(dBc),
ACPR
(dBc)
G
ps
,POWER
GAIN
(dB)
30
10
15
20
25
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA
2Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
2200
2180
2160
2140
2120
2100
2080
6
14
13
12
11
10
9
8
7
44
35
30
25
20
28
32
36
40
1000
11
15
1
IDQ = 1600 mA
1400 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
800 mA
1200 mA
1000 mA
10
100
14.5
14
13.5
13
12.5
12
11.5
1000
65
25
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
100
10
30
35
40
45
50
55
60
1000 mA
800 mA
IDQ = 1600 mA
1200 mA
1400 mA
VDD = 28 Vdc
f1 = 2135 MHz,
f2 = 2145 MHz
TwoTone Measurement,
10 MHz Tone Spacing
100
60
25
0.1
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
110
30
35
40
45
50
55
50
58
35
Ideal
P1dB = 52.5 dBm (178 W)
Actual
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P out
,
OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 5
sec(on), 1 msec(off)
Center Frequency = 2140 MHz
P3dB = 53.02 dBm (200.5 W)
57
56
55
54
53
52
51
37
39
41
43
45
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
TwoTone Measurements, Center Frequency = 2140 MHz
3rd Order
5th Order
7th Order
η
D
,DRAIN
EFFICIENCY
(%)
η
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21150 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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