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參數(shù)資料
| 型號： | MRF5S21130HSR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| 中文描述： | 將使用的AB類的PCN-PCS/cellularradio和WLL應(yīng)用。 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 373K |
| 代理商： | MRF5S21130HSR3 |
4
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
Figure 2. MRF5S21130HR3(SR3) Test Circuit Component Layout
MRF5S21130
Rev 0
C1
R1
R2
C7
C8
C3
C5
C4
C6
C9
C11C13C15
C10
C12C14 C16
C17
C19
C18
C20
C2
C
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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PDF描述 |
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| MRF5S21130HR3 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21150 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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