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參數(shù)資料
| 型號： | MRF5S21130HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 398K |
| 代理商： | MRF5S21130HR3 |
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
TYPICAL CHARACTERISTICS
0
35
5
55
20
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG. (WCDMA)
Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
IM3
(dBc),
ACPR
(dBc)
10
15
20
25
30
35
40
45
30
25
30
20
35
15
40
10
45
5
50
IM3
η
D
η
D
,,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
220
109
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
106
120
140
160
180
200
MTTF
FACT
OR
(HOURS
x
AMPS
)2
VDD = 28 Vdc, IDQ = 1200 mA, f1 = 2135 MHz
f2 = 2145 MHz, 2Carrier WCDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
PROBABILITY
(%)
10
1
0.1
0.01
0.001
2
468
20
515
10
0
5
10
15
20
25
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
110
120
70
20
80
60
50
(dB)
90
100
40
30
3.84 MHz
Channel BW
IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
WCDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @
±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @
±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
相關PDF資料 |
PDF描述 |
|---|---|
| MRF5S21130SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21150HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21150HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21150SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21130HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130HS | 制造商:Motorola Inc 功能描述: |
| MRF5S21130HSR3 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
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