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參數(shù)資料
| 型號： | MRF5S21100LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 390K |
| 代理商： | MRF5S21100LR3 |
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ARCHIVE
INFORMA
TION
Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S21100LR3 MRF5S21100LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
42
48
56
34
P3dB = 51.88 dBm (154.17 W)
VDD = 28 Vdc, IDQ = 1050 mA
Pulsed CW, 8
sec(on), 1msec(off)
Center Frequency = 2140 MHz
Actual
Ideal
P1dB = 51.18 dBm (131.22 W)
55
53
52
50
49
36
37
38
41
40
54
51
35
39
η
5
15
2040
45
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-DCMA Broadband Performance
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc, Pout = 23 W (Avg.), IDQ = 1050 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
IM3
(dBc),
ACPR
(dBc)
,DRAINη
50
10
20
30
40
INPUT
RETURN
LOSS
(dB)
IRL,
EFFICIENCY
(%)
0
2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
14
35
13
30
12
25
11
20
10
20
9
25
8
30
7
35
6
40
100
11
16
1
IDQ = 1400 mA
650 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
1050 mA
850 mA
1250 mA
15
14
13
12
10
100
55
15
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IM3,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
IDQ = 1400 mA
650 mA
1050 mA
850 mA
1250 mA
20
25
30
35
40
45
50
10
60
20
1
7th Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1050 mA
TwoTone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
0.1
25
30
35
40
45
50
55
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P out
,
OUTPUT
POWER
(dBm)
相關(guān)PDF資料 |
PDF描述 |
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| MRF5S21100L | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| MRF5S21130HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21100LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130HS | 制造商:Motorola Inc 功能描述: |
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