參數(shù)資料
型號(hào)： MRF5S21045MR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： PLASTIC, CASE 1486-03, 4 PIN
文件頁(yè)數(shù)： 13/16頁(yè)
文件大?。?/td> 563K
代理商： MRF5S21045MR1
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
6
RF Device Data
Freescale Semiconductor
MRF5S21045MR1 MRF5S21045MBR1
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
25
0.1
7th Order
TWO TONE SPACING (MHz)
VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 500 mA
Two Tone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
30
35
40
45
50
55
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
Figure 8. Pulse CW Output Power versus
Input Power
40
54
P3dB = 48.17 dBm (65.6 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 500 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
Center Frequency = 2140 MHz
52
46
42
30
34
32
36
Actual
Ideal
P1dB = 47.60 dBm (57.5 W)
50
44
48
38
28
P
out
,OUTPUT
POWER
(dBm)
IM3
(dBc),
ACPR
(dBc)
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
Pout, OUTPUT POWER (WATTS) AVG.
40
10
20
30
40
10
50
1
10
100
20
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 x WCDMA, 10 MHz
@ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
100
11
17
0.1
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 500 mA
f = 2140 MHz
10
1
16
15
14
13
12
50
40
30
20
10
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
VDD = 12 V
16 V
80
6
16
050
20
10
8
30
40
12
14
IDQ = 500 mA
f = 2140 MHz
TC = 30_C
25
_C
IM3
ηD
30
_C
85
_C
85
_C
25
_C
30
_C
85
_C
ACPR
25
_C
30
_C
25
_C
Gps
85
_C
TC = 30_C
30
_C
25
_C
85
_C
25
_C
70
60
10
20 V
24 V
28 V
32 V
85
_C
相關(guān)PDF資料
PDF描述
MRF5S21045NR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S21045NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S21090LR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21100HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21100HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S21045NBR1 功能描述:射頻MOSFET電源晶體管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S21045NR1 功能描述:射頻MOSFET電源晶體管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S21045NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21090HR3 功能描述:射頻MOSFET電源晶體管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S21090HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
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