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參數(shù)資料
| 型號： | MRF5S19130SR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 417K |
| 代理商： | MRF5S19130SR3 |
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Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S19130R3 MRF5S19130SR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M4 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 Adc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.5
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.7
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Gps
12
13
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
23
25
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 -2.5 MHz and f2 +2.5 MHz
referenced to carrier channel power.)
IM3
—
-37
-35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz)
ACPR
—
-51
-48
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL
—
-15
-9
dB
(1) Part is internally matched both on input and output.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S19150 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19150H | 制造商:Freescale Semiconductor 功能描述:L BAND, SI, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19150HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 32W N/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S19150HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF5S19150HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 32W N/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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