- 您現在的位置：買賣IC網 > PDF目錄359217 > MRF5S19130HSR3 (飛思卡爾半導體(中國)有限公司) Suitable for TDMA, CDMA and multicarrier amplifier applications. PDF資料下載
參數資料
| 型號： | MRF5S19130HSR3 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | Suitable for TDMA, CDMA and multicarrier amplifier applications. |
| 中文描述： | 適用于TDMA和CDMA及多載波放大器應用。 |
| 文件頁數： | 6/12頁 |
| 文件大?。?/td> | 415K |
| 代理商： | MRF5S19130HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
TYPICAL CHARACTERISTICS
η
D
0
35
1
65
30
G
ps
ACPR
IM3
P
out
, OUTPUT POWER (WATTS) AVG. (NCDMA)
Figure 8. 2-Carrier N-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
V
DD
= 28 Vdc, I
DQ
= 1200 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x NCDMA, 2.5 MHz @
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
I
10
30
35
25
40
20
45
15
50
10
55
5
60
100
0
f, FREQUENCY (MHz)
Figure 9. 2-Carrier N-CDMA Spectrum
(
10
20
30
40
50
60
70
80
90
ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
IM3 @
1.2288 MHz
Integrated BW
+IM3 @
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5
4.5
3
0
1.5
3
4.5
6
7.5
7.5
220
10
5
10
9
100
Figure 10. MTTF Factor versus Junction
Temperature
10
8
10
7
10
6
120
140
160
180
200
M
2
)
T
J
, JUNCTION TEMPERATURE (
°
C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
η
D
,
p
,
相關PDF資料 |
PDF描述 |
|---|---|
| MRF5S21045NR1 | RF Power Field Effect Transistors |
| MRF5S21045 | RF Power Field Effect Transistors |
| MRF5S21090HR3 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| MRF5S21090HSR3 | XTAL MTL T/H HC49/U |
| MRF5S21100HR3 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF5S19130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S19130R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19130SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19150 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19150H | 制造商:Freescale Semiconductor 功能描述:L BAND, SI, N-CHANNEL, RF POWER, MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。