參數(shù)資料
型號： MRF5S19100LR3
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-780, CASE 465-06, 2 PIN
文件頁數(shù)： 8/12頁
文件大小： 611K
代理商： MRF5S19100LR3
5
MRF5S19100LR3 MRF5S19100LSR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
η
5
15
1860
-55
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2–Carrier N–CDMA Broadband Performance
G
ps
,POWER
GAIN
(dB)
,DRAINη
IM3
(dBc),
ACPR
(dBc)
-35
-15
-20
-25
-30 INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 1000 mA
2-Carrier N-CDMA, 2.5 MHz Carrier Spacing
13
30
11
20
9
-35
7
-45
1880 1900 1920 1940 1960 1980 2000 2020 2040
-10
EFFICIENCY
(%)
100
10
16
1
1300 mA
IDQ = 1500 mA
1000 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two–Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurement, 2.5 MHz Tone Spacing
760 mA
530 mA
10
15
14
13
11
100
-55
-15
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IM3,
THIRD
ORDER
INTERMODULA
TION
DIST
OR
TION
(dBc)
1000 mA
1300 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurement, 2.5 MHz Tone Spacing
760 mA
IDQ = 1500 mA
10
-20
-25
-30
-35
-40
-45
-50
10
-55
-25
0.1
7th Order
TWO-TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
-30
-35
-40
-45
-50
1
5th Order
3rd Order
44
46
58
32
P3dB = 51.98 dBm (157.81 W)
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P out
,OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 1000 mA
Pulsed CW, 8 sec(on), 1 msec(off)
Center Frequency = 1960 MHz
42
P1dB = 51.3 dBm (135.01 W)
Ideal
Actual
57
56
55
54
53
52
51
49
47
33 34 35 36 37
38 39
40 41
50
48
43
40
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA
Two-Tone Measurements, Center Frequency = 1960 MHz
530 mA
12
35
25
-50
-40
-30
14
12
10
8
6
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
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