參數(shù)資料
型號(hào): MRF5S19090LR3
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-780, CASE 465-06, 2 PIN
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 420K
代理商: MRF5S19090LR3
A
A
F
Freescale Semiconductor, Inc.
MRF5S19090LR3 MRF5S19090LSR3
MOTOROLA RF DEVICE DATA
3
For More Information On This Product,
Go to: www.freescale.com
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.091
x 1.133
Microstrip
0.542
x 0.071
Microstrip
0.450
x 1.133
Microstrip
0.640
x 0.141
Microstrip
0.316
x 0.080
Microstrip
1.209
x 0.080
Microstrip
Arlon GX-0300-55-22, 30 mil,
ε
r
= 2.55
Figure 1. MRF5S19090 Test Circuit Schematic
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.140
x 0.080
Microstrip
0.450
x 0.080
Microstrip
0.140
x 0.080
Microstrip
0.525
x 0.080
Microstrip
0.636
x 0.141
Microstrip
0.340
x 0.050
Microstrip
0.320
x 1.401
Microstrip
C3
R2
V
GG
V
DD
C9
C13
C8
C15
C6
C7
C1
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z3
Z4
Z5
Z6
Z9
Z11
Z12
Z13
+
DUT
C12
C11
R4
W1
C2
Z10
Z8
B1
R3
+
C4
C5
C14
Z7
+
+
C10
+
Table 1. MRF5S19090 Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
95F786
100B220CP 500X
100B100CP 500X
T494C105(1)050AS
CDR33BX104AKWS
100B102JP 500X
100B4R3JP 500X
T494D106(1)035AS
T494X226(1)035AS
100B2.7BP 500X
44F3358
D5534M07B1K00R
CR1206 564JT
RM73B2B120JT
Manufacturer
Newark
ATC
ATC
Kemet
Kemet
ATC
ATC
Kemet
Kemet
ATC
Newark
Newark
Newark
Garrett Electronics
B1
C1
C2
C3, C13
C4, C12
C5, C11
C6, C7
C8
C9, C10
C14
C15
R1
R2
R3, R4
W1
Short RF Bead
22 pF Chip Capacitor, B Case
10 pF Chip Capacitor, B Case
1
μ
F, 50 V SMT Tantalum Capacitors
0.1
μ
F Chip Capacitors, B Case
1k pF Chip Capacitors, B Case
4.3 pF Chip Capacitors, B Case
10
μ
F, 35 V SMT Tantalum Capacitor
22
μ
F, 35 V SMT Tantalum Capacitors
2.7 pF Chip Capacitor, B Case
0.6 – 4.5 Gigatrim Variable Capacitor
1 k Chip Resistor
560 k Chip Resistor
12 Chip Resistors
1 turn 14 gauge wire
相關(guān)PDF資料
PDF描述
MRF5S19090LSR3 1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S21130 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130R3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130S The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130SR3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S19090LSR3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S19100HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19100HR 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRF5S19100HR3 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S19100HR5 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR