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參數(shù)資料
| 型號(hào)： | MRF5S19090L |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 442K |
| 代理商： | MRF5S19090L |
MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3
2
MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 Adc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
5
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.7
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR
measured in 30 kHz Bandwidth and IM3 measured in 1.2288 MHz Bandwidth. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Gps
13.5
14.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
η
24
25.8
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth at f1 –2.5 MHz and f2 = +2.5 MHz)
IM3
—
–37
–35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth at f1 –885 kHz and f2 +885 kHz)
ACPR
—
–51
–48
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
IRL
—
–14.5
–9
dB
(1) Part is internally matched both on input and output.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S19090LR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19090LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19100HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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