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參數(shù)資料
| 型號(hào)： | MRF5S19090HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 461K |
| 代理商： | MRF5S19090HSR3 |
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MRF5S19090HR3 MRF5S19090HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
6
16
1860
--60
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2--Carrier N--CDMA Broadband Performance
G
ps
,
P
O
W
E
R
G
A
IN
(d
B
)
IM
3
(d
B
c)
,A
C
P
R
(d
B
c)
--50
--10
--20
--30
--40
IN
P
U
T
R
E
T
U
R
N
LO
S
(d
B
)
IR
L,
VDD = 28 Vdc, Pout = 18 W (Avg.), IDQ = 850 mA
2--Carrier N--CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
14
30
12
20
10
--20
8
--40
1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
0
100
12
17
1
1100 mA
IDQ = 1300 mA
850 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two--Tone Power Gain versus
Output Power
G
ps
,
P
O
W
E
R
G
A
IN
(d
B
)
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurement, 2.5 MHz Tone Spacing
650 mA
450 mA
10
16
15
14
13
100
--55
--15
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
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IR
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IN
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LA
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N
D
IS
T
O
R
T
IO
N
(d
B
c)
1100 mA
1300 mA
850 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurement, 2.5 MHz Tone Spacing
650 mA
IDQ = 450 mA
10
--20
--25
--30
--35
--40
--45
--50
10
--55
--25
0.1
7th Order
TWO--TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
IN
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O
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LA
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IO
N
D
IS
T
O
R
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IO
N
(d
B
c)
IM
D
,
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA
--30
--35
--40
--45
--50
1
5th Order
3rd Order
42
45
56
31
P3dB = 51.21 dBm (132.13 W)
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P o
ut
,O
U
T
P
U
T
P
O
W
E
R
(d
B
m
)
VDD = 28 Vdc, IDQ = 850 mA
Pulsed CW, 8 sec(on), 1 msec(off)
f = 1960 MHz
41
P1dB = 50.82 dBm (120.78 W)
Ideal
Actual
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52
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50
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47
46
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η
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IN
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F
IC
IE
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C
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(%
)
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
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| MRF5S19090HSR5 | 功能描述:MOSFET RF N-CHAN 28V 18W NI-780S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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| MRF5S19090LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
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